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NSI50350ADT4G
http://onsemi.com
2
MAXIMUM RATINGS (T
A
 = 25癈 unless otherwise noted)
Rating
Symbol
Value
Unit
AnodeCathode Voltage
Vak Max
50
V
Reverse Voltage
V
R
500
mV
Operating and Storage Junction Temperature Range
T
J
, T
stg
55 to +175
癈
ESD Rating:    Human Body Model
Machine Model
ESD
Class 3B (8000 V)
Class C (400 V)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T
A
 = 25癈 unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Steady State Current @ Vak = 7.5 V (Note 1)
I
reg(SS)
315
350
385
mA
Voltage Overhead (Note 2)
V
overhead
1.8
V
Pulse Current @ Vak = 7.5 V (Note 3)
I
reg(P)
376.5
424
474.5
mA
1.  I
reg(SS)
 steady state is the voltage (Vak) applied for a time duration e 300 sec, using 900 mm
2
 DENKA K1, 1.5 mm Al, 2kV Thermally
conductive dielectric, 2 oz. Cu (or equivalent), in still air.
2.  V
overhead
 = V
in
  V
LEDs
. V
overhead
 is typical value for 70% I
reg(SS)
.
3.  I
reg(P)
 nonrepetitive pulse test. Pulse width t d 360 msec.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 4) T
A
 = 25癈
 Derate above 25癈
P
D
4144
27.62
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 4)
R
?SPAN class="pst NSI50350ADT4G_2471020_5">JA
36.2
癈/W
Thermal Reference, JunctiontoTab (Note 4)
R
?SPAN class="pst NSI50350ADT4G_2471020_5">JL
1.16
癈/W
Total Device Dissipation (Note 5) T
A
 = 25癈
 Derate above 25癈
P
D
6383
42.6
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 5)
R
?SPAN class="pst NSI50350ADT4G_2471020_5">JA
23.5
癈/W
Thermal Reference, JunctiontoTab (Note 5)
R
?/DIV>
JL
1.07
癈/W
Total Device Dissipation (Note 6) T
A
 = 25癈
 Derate above 25癈
P
D
8671
57.8
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 6)
R
?SPAN class="pst NSI50350ADT4G_2471020_5">JA
17.3
癈/W
Thermal Reference, JunctiontoTab (Note 6)
R
?/DIV>
JL
0.76
癈/W
Total Device Dissipation (Note 7) T
A
 = 25癈
 Derate above 25癈
P
D
11029
73.5
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 7)
R
?SPAN class="pst NSI50350ADT4G_2471020_5">JA
13.6
癈/W
Thermal Reference, JunctiontoTab (Note 7)
R
?/DIV>
JL
0.72
癈/W
Total Device Dissipation (Note 8) T
A
 = 25癈
 Derate above 25癈
P
D
4202
28.01
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 8)
R
?SPAN class="pst NSI50350ADT4G_2471020_5">JA
35.7
癈/W
Thermal Reference, JunctiontoTab (Note 8)
R
?SPAN class="pst NSI50350ADT4G_2471020_5">JL
5.4
癈/W
NOTE: Lead measurements are made by noncontact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher 癈/W values based upon empirical
measurements and method of attachment.
4.  400 mm
2
, see below PCB description, still air.
5.  900 mm
2
, see below PCB description, still air.
6.  1600 mm
2
, see below PCB description, still air.
7.  2500 mm
2
, see below PCB description, still air.
(For NOTES 47: PCB is DENKA K1, 1.5 mm Al, 2kV Thermally conductive dielectric, 2 oz. Cu, or equivalent).
8.  1000 mm
2
, FR4, 3 oz Cu, still air.
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